Phonon-based Thermal Boundary Resistance Models for Micro- and Nanoscale Devices

Ce Li

doi:10.54254/2753-8818/2025.GL24876

Theoretical and Natural ScienceOpen access

Phonon-based Thermal Boundary Resistance Models for Micro- and Nanoscale Devices

Research Article

Open Access

Phonon-based Thermal Boundary Resistance Models for Micro- and Nanoscale Devices

Ce Li ^1*

¹ North China Electric Power University, Beijing, China

^*Corresponding author: 13665168733@163.com

Published on 20 July 2025

TNS Vol.125

ISSN (Print): 2753-8826

ISSN (Online): 2753-8818

ISBN (Print): 978-1-80590-233-1

ISBN (Online): 978-1-80590-234-8

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Abstract

Micro and nano-semiconductor devices are increasingly crucial in multiple fields such as information technology and artificial intelligence. However, as the volume of transistors decreases and their density increases, local heat accumulation occurring in devices due to the Joule heating effect seriously affects their service life and performance. Therefore, thermal management of devices has become more and more important. As a key factor limiting heat dissipation, thermal boundary resistance (TBR) is particularly significant in nanoscale devices, accounting for over 50% of the total thermal resistance. The theoretical models of thermal boundary resistance can not only help accurately predict the thermal boundary resistance but also effectively understand its influence mechanism. This paper selects and introduces some typical classic theoretical models, elaborates on their characteristics and limitations, summarizes various influencing factors of thermal boundary resistance and provides an outlook on the future research of thermal boundary resistance.

Keywords:

Micro and nano- nano-semiconductor devices, Thermal boundary resistance, Theoretical models, Phonon

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