The Review of Structure Development of Gate-stacked Double-Gate MOSFETs

Wanchen Wang

doi:10.54254/2753-8818/2026.HZ28300

Theoretical and Natural ScienceOpen access

The Review of Structure Development of Gate-stacked Double-Gate MOSFETs

Research Article

Open Access

The Review of Structure Development of Gate-stacked Double-Gate MOSFETs

Wanchen Wang ^1*

¹ Xiamen University

^*Corresponding author: 37520242204675@stu.xmu.edu.cn

Published on 23 October 2025

TNS Vol.145

ISSN (Print): 2753-8826

ISSN (Online): 2753-8818

ISBN (Print): 978-1-80590-467-0

ISBN (Online): 978-1-80590-468-7

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Abstract

Gate-stacked double-gate (DG) MOSFETs, featuring a thin SiO₂ interfacial layer combined with high-k dielectrics, improve electrostatics, suppress leakage, and mitigate short-channel effects, enhancing the performance implication. They are promising for low-power electronics, high-performance computing, and biosensing. Conventional MOSFET scaling faces critical bottlenecks, as high-k dielectrics alone suffer from leakage and interface issues. At the same time, structural innovations such as FinFETs cannot fully suppress short-channel effects at advanced nodes. GAA demonstrates good performance, but costs excessively. This work innovatively proposes co-optimizing materials (Al₂O₃, HfO₂, La₂O₃) and structures (strain engineering, dual-material gates, multigate topologies) in gate-stacked double-gate (DG) MOSFETs, integrating high-k stacks with multigate architectures to reinforce electrostatics and scalability. Such synergy ensures enhanced performance while meeting the dual demands of low-power electronics, high-performance computing, and emerging biosensing applications.

Keywords:

Gate-stacked double-gate MOSFETs, high-κ dielectrics, short-channel effects, low-power electronics.

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References

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References

[2]. Y. Cui, Z. Zhong, and C. Wang, “High-k gate dielectrics for advanced MOS devices, ” Nat. Rev. Mater., vol. 6, pp. 131–148, 2021, doi: 10.1038/s41578-020-00243-4.

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[10]. A. T. Shora, “3-D Modelling Based Comprehensive Analysis of High-κ Gate Stack Graded Channel Dual Material Trigate MOSFET, ” J. Semicond., vol. 39, no. 12, Art. 124016, 2018.

Cite this article

Wang,W. (2025). The Review of Structure Development of Gate-stacked Double-Gate MOSFETs. Theoretical and Natural Science,145,17-27.

Data availability

The datasets used and/or analyzed during the current study will be available from the authors upon reasonable request.

About volume

Volume title: Proceedings of CONF-CIAP 2026 Symposium: International Conference on Atomic Magnetometer and Applications

ISBN: 978-1-80590-467-0(Print) / 978-1-80590-468-7(Online)

Editor: Marwan Omar, Jixi Lu, Mao Ye

Conference website: https://2026.confciap.org/hangzhou.html

Conference date: 30 January 2026

Series: Theoretical and Natural Science

Volume number: Vol.145

ISSN: 2753-8818(Print) / 2753-8826(Online)

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