Research Progress on the Spin Interface of Ferromagnetic Electrodes

Huafu Sang

doi:10.54254/2755-2721/2026.KA29894

Applied and Computational EngineeringOpen access

Research Progress on the Spin Interface of Ferromagnetic Electrodes

Research Article

Open Access

Research Progress on the Spin Interface of Ferromagnetic Electrodes

Huafu Sang ^1*

¹ Northeastern University

^*Corresponding author: 13840114082@163.com

Published on 26 November 2025

ACE Vol.209

ISSN (Print): 2755-273X

ISSN (Online): 2755-2721

ISBN (Print): 978-1-80590-561-5

ISBN (Online): 978-1-80590-562-2

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Abstract

Organic semiconductors are regarded as ideal material systems for developing the next generation of flexible spintronic devices due to their excellent flexibility, low preparation cost and unique long-spin relaxation characteristics. This paper systematically reviews the significant progress made in the research of FM/OSC spin interfaces in recent years and discusses it from three aspects: material systems, physical mechanisms, and device structures. At the material level, the focus is on the research of the development and application of new two-dimensional ferromagnetic electrodes, high-mobility organic semiconductors, and functional interface modification layers. At the physical mechanism level, key scientific issues such as interface energy level alignment, magnetic proximity effect and spin-related transport were deeply explored; At the device level, the structural innovation and performance improvement strategies of devices such as organic spin valves, magnetic tunnel junctions and spin transistors were elaborated in detail. Current research has achieved remarkable results in improving the room-temperature performance of devices and extending the spin diffusion length. Finally, this paper points out the main challenges that this field will face in its future development, especially the technical bottlenecks in achieving efficient spin injection, remote spin transport, and chip-level scalable fabrication, and looks forward to potential application directions such as flexible storage and neuromorphic computing.

Keywords:

Ferromagnetic electrode Organic semiconductor Spin interface Spin injection Magnetoresistive devices Energy level matching

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